Low-field electron transport in quasi-one-dimensional semiconducting structures
Identifieur interne : 002543 ( Main/Exploration ); précédent : 002542; suivant : 002544Low-field electron transport in quasi-one-dimensional semiconducting structures
Auteurs :Source :
- Journal of Physics C: Solid State Physics [ 0022-3719 ] ; 1984-05-20.
English descriptors
- Teeft :
- Acoustic, Acoustic phonon, Acoustic phonons, Active layer, Background impurities, Background impurity, Bulk material, Cladding, Dielectric function, Dominant mechanism, Electron mobility, Electron transport, Energy eigenvalues, Full curves, Ground state, Impurity, Matrix element, Matrix elements, Maxwellian distribution, Mobility, Molecular beam epitaxy, Momentum relaxation approximation, Momentum relaxation rate, Momentum relaxation time, Optical properties, Phonon, Phonons, Phys, Present model, Relaxation, Relaxation time approximation, Remote impurities, Remote impurity, Schrodinger equation, Screening effect, Semiconducting, Semiconducting structures, Size quantum limit, Solid state phys, Such structure, Thin wire, Transverse dimension, Transverse dimensions, Unit length, Vassell.
Url:
DOI: 10.1088/0022-3719/17/14/010
Affiliations:
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Le document en format XML
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